Embedded JFETs for High Voltage Applications

ABSTRACT

A device includes a buried well region and a first HVW region of the first conductivity, and an insulation region over the first HVW region. A drain region of the first conductivity type is disposed on a first side of the insulation region and in a top surface region of the first HVW region. A first well region and a second well region of a second conductivity type opposite the first conductivity type are on the second side of the insulation region. A second HVW region of the first conductivity type is disposed between the first and the second well regions, wherein the second HVW region is connected to the buried well region. A source region of the first conductivity type is in a top surface region of the second HVW region, wherein the source region, the drain region, and the buried well region form a JFET.

PRIORITY CLAIM AND CROSS-REFERENCE

This application is a continuation of U.S. patent application Ser. No.15/613,526, entitled “Embedded JFETs for High Voltage Applications,”filed Jun. 5, 2017, which is a continuation of U.S. patent applicationSer. No. 15/004,438, entitled “Embedded JFETs for High VoltageApplications,” filed Jan. 22, 2016, now U.S. Pat. No. 9,673,323 issuedJun. 6, 2017, which is a divisional of U.S. patent application Ser. No.14/166,475, entitled “Embedded JFETs for High Voltage Applications,”filed Jan. 28, 2014 now U.S. Pat. No. 9,257,979 issued Feb. 9, 2016,which application is a continuation of U.S. patent application Ser. No.13/481,462, entitled “Embedded JFETS on High Voltage Applications,”filed on May 25, 2012, now U.S. Pat. No. 8,704,279 issued Apr. 22, 2014,which applications are incorporated herein by reference.

BACKGROUND

Junction Field-Effect Transistor (JFET) is a type of field-effecttransistor that can be used as an electronically-controlled switch or asa voltage-controlled resistor. In a JFET, electric charges flow througha semiconducting channel between a source and drain. By applying a biasvoltage to a gate, the channel of the JFET may be pinched, so that theelectric current flowing between the source and the drain is impeded orswitched off.

JFETs have various structures. The different structures of the JFETswere design to suit for different usages of the JFETs. For example, theJFETs may be designed to be applied with high drain voltages, highcurrents, or the like.

BRIEF DESCRIPTION OF THE DRAWINGS

For a more complete understanding of the embodiments, and the advantagesthereof, reference is now made to the following descriptions taken inconjunction with the accompanying drawings, in which:

FIGS. 1A through 4C are top views and cross-sectional views of JunctionField-Effect Transistors (JFETs) in accordance with some exemplaryembodiments; and

FIG. 5 illustrates an equivalent circuit diagram of the JFET shown inFIGS. 3A through 4C.

DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS

The making and using of the embodiments of the disclosure are discussedin detail below. It should be appreciated, however, that the embodimentsprovide many applicable inventive concepts that can be embodied in awide variety of specific contexts. The specific embodiments discussedare illustrative, and do not limit the scope of the disclosure.

A high voltage Junction Field-Effect Transistor (JFET) is provided inaccordance with various exemplary embodiments. The variations and theoperation of the embodiments are discussed. Throughout the various viewsand illustrative embodiments, like reference numbers are used todesignate like elements. In the illustrated embodiments, n-type JFETsare provided to explain the concept of the embodiments. It isappreciated that the teaching in the embodiments is readily availablefor the formation of p-type JFETs, with the conductivity types of therespective doped regions inverted.

FIGS. 1A through 1C are a top view and cross-sectional views of JFET 100in accordance with some exemplary embodiments. Referring to FIG. 1A,which is a top view, JFET 100 includes drain region 20, gate electrode24, and source region 26. Gate electrode 24 is disposed between drainregion 20 and source region 26. A plurality of contacts 30 are formedover and electrically couple to the respective underlying drain region20, gate electrode 24, and source region 26. Furthermore, High-VoltageN-Well (HVNW) 38, P-Wells 40 (including 40A and 40B), and P-type BuriedLayers (PBLs) 42 are also included in JFET 100.

FIG. 1B illustrates a cross-sectional view of JFET 100 as shown in FIG.1A, wherein the cross-sectional view is obtained from the plane crossingline 1B-1B in FIG. 1A. JFET 100 is formed over substrate 34, which maybe a p-type substrate, for example, although an n-type substrate mayalso be used. Buried N-Well (BNW) 36 is formed over substrate 34. Insome embodiments, BNW 36 is doped with an n-type impurity to an impurityconcentration, for example, between about 10¹⁴/cm³ and about 10¹⁷/cm³.Over BNW 36, HVNW 38 and PW regions 40 are formed. HVNW 38 and PWregions 40 may be doped with an n-type impurity and a p-type impurity,respectively, to impurity concentrations about 10¹⁴/cm³ and about10¹⁷/cm³, for example. PBL 42 is formed under HVNW 38 and over BNW 36,and is of p-type. The impurity concentration of PBL 42 may be betweenabout 10¹⁵/cm³ and about 10¹⁷/cm³. Drain region 20 and source region 26are heavily doped (represented by a “+” sign) n-type regions, which mayhave an n-type impurity concentration greater than about 10¹⁹/cm³, orbetween about 10¹⁹/cm³ and about 10²¹/cm³.

Insulation region 46 is formed over HVNW 38. In some embodiments,insulation region 46 is a field oxide region formed through theoxidation of silicon. In alternative embodiments, insulation region 46may be a Shallow Trench Isolation (STI) region. A portion of PBL 42 isunder and aligned to insulation region 46. The formation of PBL 42 maybe used for Reducing Surface electric Field (RESURF), which electricfield may be high due to the high voltage applied on drain region 20.

PW regions 40 include PW regions 40A and PW 40B, which are spaced apartfrom each other by portions of HVNW 38, in which source region 26 isformed. As shown in FIG. 1A, PW regions 40A also includes PW regions40A1, 40A2, and 40A3, with each connected to one of PBLs 42.Accordingly, when a voltage is applied to PW regions 40A, the voltagemay be applied to PBLs 42 through PWs regions 40A. Referring to FIG. 1B,in some embodiments, heavily doped p-type (P+) regions 48A and 48B areformed in PW regions 40A and 40B, respectively. P+ regions 48A and 48Bact as the pickup regions of PW regions 40A and 40B, respectively. PWregions 40A and 40B may be electrically interconnected through overlyingmetal connections, and hence are at a same voltage level during theoperation of JFET 100.

Gate dielectric 22 and gate electrode 24 are formed over and aligned toHVNW 38, insulation region 46, and may extend over PW regions 40A. Insome embodiments, P+ region 48A and gate electrode 24 are electricallyinterconnected through contact plugs 30 and one of metal lines 50, sothat the same voltage may be applied to gate electrode 24 and P+ regions48A, and hence to PW regions 40A. Conductive feature 52, which may beformed simultaneously when gate electrode 24 is formed, is overinsulation region 46, and may be electrically connected to drain region20 through contact plugs 30 and one of metal lines 50.

Referring to FIG. 1B, it is observed that there is a current channelbetween and connected to drain region 20 and source regions 26, whereinthe current channel (illustrated as arrow 54) is formed of n-typeregions. A first current I1 may flow through current channel 54 andbetween drain region 20 and source regions 26. The current channel 54includes the portion of HVNW 38 under drain region 20, BNW 36 (which isunder PBL 42), and the portion of HVNW 38 between PW regions 40A and40B. Voltage source 60 supplies voltages to drain region 20, PW regions40A/40B, and source region 26. When appropriate voltages are applied todrain region 20, PW regions 40A/40B, and source region 26, current I1flows through current channel 54. Voltage source 60 may also beconfigured to adjust the voltages applied on drain region 20, PW regions40A/40B, and source region 26 to turn off JFET 100. For example,depletion regions 56 are schematically illustrated, which are formed dueto the junctions between PW regions 40A/40B and HVNW 38 and BNW 36. Byincreasing the bias voltages on source region 26, and/or reducing thebias on PW regions 40A and 40B, depletion regions 56 grow in thedirection shown by arrows 58. When the bias voltage reaches thepinch-off voltage of JFET 100, depletion regions 56 from opposite sideseventually join with each other. The current channel 54 is thus pinchedoff by PW regions 40A/40B, and current I1 is turned off. Accordingly, PWregions 40A and 40B may be used to pinch off current I1. It is observedthat by adjusting the spacing between PW regions 40A and 40B, thepinch-off voltage may be adjusted.

FIG. 1C illustrates a cross-sectional view of JFET 100 as shown in FIG.1A, wherein the cross-sectional view is obtained from the plane crossingline 1C-1C in FIG. 1A. FIG. 1C illustrates a second current channel thatflows between drain region 20 and source region 26. The current flowingin the second current channel is represented as I2. It is observed thatcurrent I2 includes portions I2A, I2B, and I2C. Current portion I2A isin HVNW 38, and is at a level higher than PBL 42 (please refer to FIG.1B). Current portion I2B is at the same level as PBL 42. Current portionI2C is in BNW 36, and is at the level lower than PBL 42.

Referring back to FIG. 1A, PW portions 40A1, 40A2, and 40A3 also formdepletion regions with the surrounding HVNW 38. Similar to the operationof current I1 in FIG. 1B, by increasing the bias voltage on sourceregion 26, and/or reducing the bias voltage on PW regions 40A1, 40A2,and 40A3, the respective depletion regions grow toward each other (andin the direction shown as arrows 58′), and eventually join with eachother. The current I2 as in FIG. 1C is thus pinched by PW regions 40A1,40A2, and 40A3. It is observed that by adjusting the spacing between PWregions 40A1, 40A2, and 40A3, the pinch-off voltage may be adjusted.

As illustrated in FIGS. 1B and 1C, the current between drain region 20and source region 26 includes current I1 (FIG. 1B) and current I2 (FIG.1C). Current I1 flows from underlying PW regions 40 upward to reachsource region 26. Current I2 flows between neighboring PW regions 40A1,40A2, and 40A3, and between neighboring PBLs 42. Accordingly, therespective current between source region 26 and drain region 20 is threedimensional. Since the current include both current I1 and current I2,the current may be higher than if there is one of currents I1 and I2.

FIGS. 2A through 4C illustrate top views and cross-sectional views ofJFETs 200, 300, and 400 in accordance with alternative embodiments.Unless specified otherwise, the materials and the characteristics of thecomponents in these embodiments are essentially the same as the likecomponents, which are denoted by like reference numerals in theembodiments shown in FIGS. 1A through 1C.

FIG. 2A illustrate a top view of JFET 200. JFET 200 has a similar topview as that of JFET 100 in FIG. 1A, except that the PW regions 40B,40A1, 40A2, and 40A3 in FIG. 1A are merged with each other to form thecontinuous PW region 40 in FIG. 2A. Alternatively stated, the PW region40 as in FIG. 2A may be considered as extending PW regions 40A1, 40A2,and 40A3 in FIG. 1A toward PW region 40B, until PW regions 40A1, 40A2,and 40A3 are merged with PW region 40B. As a result, the continuoussource region 26 in FIG. 1A is now broken apart into source regions 26Aand 26B. Accordingly, it may be treated as that PW region 40 includeslegs 40A1, 40A2, and 40A3 that extend beyond the right edges of sourceregions 26A and 26B. Similarly, PW legs 40A1, 40A2, and 40A3 may pinchthe current I2 (FIG. 2B) flowing from drain region 20 to source regions26A and 26B, wherein the pinch-off of current I2 is illustrated byarrows 58′ in FIG. 2A.

FIG. 2B illustrates a cross-sectional view that is obtained from theplane crossing line 2B-2B in FIG. 2A. It is observed that current I2includes a portion flowing in HVNW 38, a portion in BNW 36, and aportion at the same level as PBL 42 (FIG. 2C).

FIG. 2C illustrates a cross-sectional view that is obtained from theplane crossing line 2C-2C in FIG. 2A. As shown in FIG. 2C, current I1can also flow in BNW 36 and reach source regions 26A and 26B. Thepinch-off of current I1 is also achieved through PW region 40, whereinarrows 58 represent the growth direction of the depletion regions thatare caused by the pinch-off voltage applied on PW region 40.Accordingly, the on-current of JFET 200, which also include current I1and current I2, is also high.

FIG. 3A illustrate a top view of JFET 300. JFET 300 has a similar topview as that of JFETs 100 in FIG. 1A and JFET 200 in FIG. 2A, exceptthat source regions 26A and 26B are fully encircled by PW region 40,which forms a PW ring. Source regions 26A and 26B are also isolated fromeach other by PW region 40.

FIG. 3B illustrate a cross-sectional view that is obtained from theplane crossing line 3B-3B in FIG. 3A. As shown in FIG. 3B, current I1can flow in BNW 36 and reach source regions 26. The pinch of current I1is achieved through PW region 40, wherein arrows 58 represent the growthdirection of the depletion regions that are caused by the voltageapplied on PW region 40. The portion of HVNW 38 underlying each ofsource regions 26A and 26B is also fully encircled by PW region 40. Itis observed that by adjusting the top view size of the portions of HVNW38 that are surrounded by PW 40, the pinch-off voltage of JFET 300 maybe adjusted.

FIG. 3C illustrate a cross-sectional view that is obtained from theplane crossing line 3C-3C in FIG. 3A. It is observed that nosource-drain current exists in HVNW 38 and at levels equal to or higherthan the level of PBL 42, as symbolized by the “X” sign, since PW region40 and PBL 42 are on the path of current I2.

FIGS. 3A through 3C also illustrate the decoupling of PW region 48 fromgate electrode 24. By electrically decoupling PW pickup region 48 fromgate electrode 24, MOS source region 126 may be formed in PW region 40.Different voltages may be applied to PW pickup region 48, MOS sourceregion 126, and gate electrode 24. Accordingly, as shown in FIGS. 3B and3C, MOS source region 126, gate electrode 24, and drain 20 form thesource region, the gate, and the drain region, respectively, ofMetal-Oxide-Semiconductor (MOS) transistor 62. Drain region 20 acts asthe drain region of both MOS transistor 62 and JFET 300. On the otherhand, PW pickup region 48 acts as the gate of JFET 300. The pinch-off orthe turning-on of JFET 300 may be achieved by applying appropriatevoltages, for example, negative voltages or ground voltages, to PWpickup region 48.

FIG. 5 illustrates an equivalent circuit diagram of the structure shownin FIGS. 3A through 3C, wherein drain region 20, source regions 126 and26, and gates 24 and 48, of MOS transistor 62 and JFET 300,respectively, are marked. By integrating MOS transistor 62 and JFET 300,the chip area that is used by integrated MOS transistor 62 and JFET 300in combination may be reduced.

FIG. 4A illustrates a top view of JFET 400. JFET 400 has a similar topview as that of JFET 300 in FIG. 3, except that PW region 40 isseparated into PW regions 40A, 40B, and 40C, which are spaced apart fromeach other by the separated portions of HVNW regions 38. Insulationregion 46′ (Please refer to FIGS. 4B and 4C) is formed over HVNW region38 to separate PW region 40A from PW region 40B.

Again, MOS source region 126, gate electrode 24, and drain 20 form thesource region, the gate, and the drain region, respectively of MOStransistor 62. Drain region 20 acts as the drain region of both MOStransistor 62 and JFET 400. On the other hand, PW pickup regions 48B and48C are interconnected to act as the gate of JFET 400. The pinch-off andthe turning-on of JFET 400 may be achieved by applying appropriatevoltages to PW pickup regions 48B and 48C. When turned on, JFET 400 hascurrent I1 (FIGS. 4B and 4C) that flows under PBL 42, and flows to thesource region 26 of JFET 400. Current I1 is illustrated in FIGS. 4B and4C, which are cross-sectional views obtained from the plane crossinglines 4B-4B and 4C-4C, respectively, in FIG. 4A. An equivalent circuitdiagram of the structure in FIGS. 4A through 4C is also illustrated inFIG. 5.

In the embodiments, the pinch-off voltages of the JFETs may be easilyadjusted by adjusting the channel width, such as the distances betweenPW regions 40. The embodiments also provide a solution for ahigh-voltage JEFT design, with the drain voltage of the JFETs inaccordance with embodiment being higher than about 400 V. Due to the useof the 3D channels (for example, referring to currents I1 and I2 inFIGS. 1B and 1C), the turn-on resistance of the JFETs is low.

In accordance with some embodiments, a device includes a buried wellregion of a first conductivity type over the substrate, and a first HVWregion of the first conductivity type over the buried well region, aninsulation region over the first HVW region. A drain region of the firstconductivity type is disposed on a first side of the insulation regionand in a top surface region of the first HVW region. A gate electrodeincludes a first portion on a second side of the insulation region, anda second portion extending over the insulation region. A first wellregion and a second well region of a second conductivity type oppositethe first conductivity type are on the second side of the insulationregion. A second HVW region of the first conductivity type is disposedbetween the first and the second well regions, wherein the second HVWregion is connected to the buried well region. A source region of thefirst conductivity type is in a top surface region of the second HVWregion, wherein the source region, the drain region, and the buried wellregion form a JFET.

In accordance with other embodiments, a device includes a substrate, aburied well region of a first conductivity type over the substrate, aHVW region of the first conductivity type over the buried well region,an insulation region over the HVW region, and a drain region of thefirst conductivity type on a first side of the insulation region andover the HVW region. A gate electrode includes a first portion on asecond side of the insulation region, and a second portion extendingover the insulation region. A source region of the first conductivitytype is disposed over a first portion of the HVW region, wherein thesource region, the drain region, and the buried well region form a JFET.A first, a second, and a third well region of a second conductivity typeopposite the first conductivity type are disposed on the second side ofthe insulation region and interconnected to each other, wherein thefirst and the second well regions are spaced apart from each other by asecond portion of the HVW region. The third well region is spaced apartfrom the first and the second well regions by the first portion of theHVW region.

In accordance with yet other embodiments, a device includes a substrate,a buried well region of a first conductivity type over the substrate, aHVW region of the first conductivity type over the buried well region,an insulation region over the HVW region, a drain region of the firstconductivity type on a first side of the insulation region and over theHVW region, and a gate electrode having a first portion on a second sideof the insulation region and a second portion extending over theinsulation region. A well region of a second conductivity type oppositethe first conductivity type is disposed on the second side of theinsulation region. The well region includes a body, and a first leg anda second leg extending from the body toward the insulation region,wherein the body and the first and the second legs contact three edgesof the HVW region. A source region of the first conductivity type isdisposed over a portion of the HVW region, wherein the source region isbetween the first and the second legs of the well region, and whereinthe source region, the drain region, and the buried well region form aJFET.

Although the embodiments and their advantages have been described indetail, it should be understood that various changes, substitutions andalterations can be made herein without departing from the spirit andscope of the embodiments as defined by the appended claims. Moreover,the scope of the present application is not intended to be limited tothe particular embodiments of the process, machine, manufacture, andcomposition of matter, means, methods and steps described in thespecification. As one of ordinary skill in the art will readilyappreciate from the disclosure, processes, machines, manufacture,compositions of matter, means, methods, or steps, presently existing orlater to be developed, that perform substantially the same function orachieve substantially the same result as the corresponding embodimentsdescribed herein may be utilized according to the disclosure.Accordingly, the appended claims are intended to include within theirscope such processes, machines, manufacture, compositions of matter,means, methods, or steps. In addition, each claim constitutes a separateembodiment, and the combination of various claims and embodiments arewithin the scope of the disclosure.

What is claimed is:
 1. A device comprising: a substrate; a buried wellregion of a first conductivity type over the substrate; a High VoltageWell (HVW) region of the first conductivity type over the buried wellregion; an insulation region over the HVW region; a drain region of thefirst conductivity type on a first side of the insulation region; a gateelectrode on a second side of the insulation region; a well regionadjacent to the insulation region, wherein the well region is of asecond conductivity type opposite to the first conductivity type, andwherein the well region comprises a continuous portion, and a first legconnecting to the continuous portion; and a first heavily doped regionand a second heavily doped region of the first conductivity type in atop region of the HVW region, wherein the first heavily doped region andthe second heavily doped region are separated from each other by thefirst leg.
 2. The device of claim 1, wherein the continuous portion andthe gate electrode are on opposing sides of the first and the secondheavily doped regions, and the first leg extends from the continuousportion in a direction toward the gate electrode.
 3. The device of claim1 further comprising: a second leg connecting to the continuous portion,wherein the first leg and the second leg are separated from each otherby the first heavily doped region; and a third leg connecting to thecontinuous portion, wherein the first leg and the third leg areseparated from each other by the second heavily doped region.
 4. Thedevice of claim 3, wherein the continuous portion, the first leg, thesecond leg, and the third leg of the well region form a pattern ofletter “E”.
 5. The device of claim 3, wherein the first leg and thesecond leg are further separated from each other by a portion of the HVWregion.
 6. The device of claim 1, wherein the gate electrode iselectrically shorted to the well region.
 7. The device of claim 1,wherein the first conductivity type is n-type.
 8. The device of claim 1,wherein the well region is configured to pinch off a current flowingthrough the buried well region.
 9. The device of claim 1 furthercomprising a buried well layer between the first HVW region and theburied well region, wherein the buried well layer is of the secondconductivity type.
 10. A device comprising: a buried n-type well (BNW)region; a p-type buried layer (PBL) over and contacting the BNW region;an high-voltage n-type well (HVNW) region comprising: a first portionover and contacting the BNW region; and a second portion over andcontacting the PBL; a p-well region over and contacting the BNW region,wherein the p-well region comprises a first leg and a second leg spacedapart from each other, and wherein the first leg and the second legcontact the PBL and the HVNW region; and a first source region at top ofthe HVNW region, wherein the first source region is between the firstleg and the second leg.
 11. The device of claim 10 further comprising: asecond source region at top of the HVNW region, wherein the secondsource region is between the first leg and a third leg of the p-wellregion.
 12. The device of claim 10, wherein the p-well region comprisesa continuous portion, with first ends of the first leg and the secondleg joined with the continuous portion, and second ends of the first legand the second leg are in contact with the PBL and the HVNW region. 13.The device of claim 10 further comprising: a drain region on top of thefirst portion of the HVNW region; and a heavily doped p-type region overand joined to the p-well region, wherein the first source region, thedrain region, and the heavily doped p-type region in combination form aJunction Field-Effect Transistor (JFET).
 14. The device of claim 10,wherein a channel region of the JFET comprises an additional firstportion in the BNW region, and an additional second portion in the HVNWregion.
 15. The device of claim 10 further comprising: a gate dielectricover and contacting the HVNW region; and a gate electrode over andcontacting the gate electrode, wherein the gate electrode iselectrically connected to the p-well region.
 16. A device comprising: aJunction Field-Effect Transistor (JFET) comprising: a high-voltagen-type well region (HVNW) region; a drain region in the HVNW region; aninsulation region extending into the HVNW region; a p-well regioncomprising a plurality of strip portions separated from each other,wherein first ends of the plurality of strip portions contact a sidewallof the HVNW region; a first heavily doped n-type region and a secondheavily doped n-type region extending into the HVNW region, wherein thefirst heavily doped n-type region and the second heavily doped n-typeregion are separated from each other by the plurality of strip portionsof the p-well region; and a heavily doped p-type region over andcontacting the p-well region.
 17. The device of claim 16, wherein thep-well region further comprises an additional portion joining secondends of the plurality of strip portions.
 18. The device of claim 16,wherein the plurality of strip portions extend beyond opposing edges ofboth of the first heavily doped n-type region and the second heavilydoped n-type region.
 19. The device of claim 16 further comprising ap-type buried layer (PBL) underlying and contacting the HVNW region. 20.The device of claim 19 further comprising a buried n-type well regionunderlying and contacting the PBL.